Datasheet > 2SK2866_09

2SK2866_09

更新时间： 2024-11-18 07:32:23

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	414K
描述
Chopper Regulator, DC−DC Converter and Motor Drive Applications

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中文翻译

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数据手册

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2SK2866_09 数据手册

2SK2866

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2866

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.54 Ω (typ.)

DS (ON)

: |Y | = 9.0 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 600 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

600

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

125

JEDEC

JEITA

TO-220AB

Single pulse avalanche energy

363

SC-46

(Note 2)

Avalanche current

12.5

TOSHIBA

2-10P1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.9 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.0

°C / W

th (ch−c)

83.3

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 6.36 mH, R = 25 Ω, I = 10 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

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与2SK2866_09相关器件

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2SK2867	ETC	获取价格
2SK2869	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2869	TYSEMI	获取价格	Low on-resistance RDS = 0.033 typ. 4V gate drive device can be driven from 5V source
2SK2869	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2869	KEXIN	获取价格	N-Channel Silicon MOSFET
2SK2869(L)	RENESAS	获取价格	0.07ohm, POWER, FET, SC-63, 3 PIN
2SK2869(L)-(2)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2869(S)	HITACHI	获取价格	Power Field-Effect Transistor, 0.07ohm, SC-64, 3 PIN
2SK2869(S)	RENESAS	获取价格	暂无描述
2SK2869(S)-(1)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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