Datasheet > 2SK2865_06

2SK2865_06

更新时间： 2024-01-02 17:04:09

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动
页数	文件大小	规格书
6页	711K
描述
Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications

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中文翻译

获取价格

数据手册

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2SK2865_06 数据手册

2SK2865

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV)

2SK2865

Chopper Regulator, DC/DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON-resistance

z High forward transfer admittance

: R

= 4.2 Ω (typ.)

DS (ON)

: |Y | = 1.7 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 600 V)

DSS

: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain−source voltage

Symbol

Rating

Unit

600

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Pulse (t = 1 ms)

(Note 1)

Drain current

JEDEC

JEITA

―

Pulse (t = 100 μs)

(Note 1)

SC-64

2-7B1B

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy

TOSHIBA

Weight: 0.36 g (typ.)

(Note 2)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

6.25

125

Unit

JEDEC

―

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

JEITA

SC-64

Thermal resistance, channel to

ambient

TOSHIBA

2-7J1B

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 41 mH, R = 25 Ω, I = 2 A

Weight: 0.36 g (typ.)

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2006-11-08

12 3 4 5 6

中文翻译

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与2SK2865_06相关器件

型号	品牌	获取价格	描述	数据表
2SK2865_10	TOSHIBA	获取价格	Chopper Regulator, DC/DC Converter and Motor Drive Applications
2SK2866	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK2866(F)	TOSHIBA	获取价格	MOSFETs MOSFET N-Ch 600V 10A Rdson=0.75Ohm
2SK2866(Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,10A I(D),TO-220AB
2SK2866_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic
2SK2866_09	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2867	ETC	获取价格
2SK2869	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2869	TYSEMI	获取价格	Low on-resistance RDS = 0.033 typ. 4V gate drive device can be driven from 5V source
2SK2869	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching

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