2SK2858-A

更新时间： 2024-11-18 13:02:55

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
8页	52K
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中文翻译

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数据手册

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2SK2858-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2858

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The 2SK2858 is a switching device which can be driven directly by a

2.5-V power source.

2.1 ± 0.1

1.25 ± 0.1

The 2SK2858 has excellent switching characteristics, and is suitable for

use as a high-speed switching device in digital circuits.

FEATURES

• Can be driven by a 2.5-V power source

• Low gate cut-off voltage

Marking

ORDERING INFORMATION

PART NUMBER

2SK2858

PACKAGE

SC-70(SSP)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

DSS

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

±20

EQUIVALENT CIRCUIT

GSS

D(DC)

±0.1

Drain

Electrode

Drain Current (pulse) ^Note

Total Power Dissipation

Channel Temperature

Storage Temperature

D(pulse)

Connection

1.Source

2.Gate

±0.4

Internal

Diode

150

°C

★

Gate

3.Drain

150

Gate

Protection

Diode

stg

–55 to +150

Source

Note PW ≤ 10 µs, Duty Cycle ≤ 1 %

Marking: G24

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published August 1999 NS CP(K)

Printed in Japan

D11706EJ2V0DS00 (2nd edition)

The mark ★ shows major revised points.

1996, 1999

12 3 4 5 6 7 8

中文翻译

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