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2SK2857C-T1-AZ PDF预览

2SK2857C-T1-AZ

更新时间: 2024-11-21 01:10:59
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瑞萨 - RENESAS 开关
页数 文件大小 规格书
8页 196K
描述
N-CHANNEL MOSFET FOR SWITCHING

2SK2857C-T1-AZ 数据手册

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Preliminary Data Sheet  
2SK2857C  
N-CHANNEL MOSFET FOR SWITCHING  
R07DS1261EJ0200  
Rev.2.00  
Jun 11, 2015  
Description  
The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven  
directly by a 4.0 V power source.  
Features  
Directly driven by a 4.0 V power source.  
Low on-state resistance  
RDS(on)1 = 105 m MAX. (VGS = 10 V, ID = 2.0 A)  
RDS(on)2 = 150 mMAX. (VGS = 4.0 V, ID = 2.0 A)  
Ordering Information  
Part Number  
Lead Plating  
Packing  
Package  
2SK2857C-T1-AZ/AY  
-AZ : Sn-Bi , -AY : Pure Sn  
1000p/Reel  
SC-62 (3p PoMM)  
Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts.  
Marking XB  
Absolute Maximum Ratings (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
60  
20  
V
V
4.0  
A
Drain Current (pulse) Note1  
16  
A
Total Power Dissipation Note2  
Channel Temperature  
2.0  
W
C  
C  
Tch  
150  
Storage Temperature  
Tstg  
55 to 150  
Note1 PW 10 s, Duty Cycle 1%  
Note2 16 cm2 X 0.7mm, ceramic substrate used  
R07DS1261EJ0200 Rev.2.00  
Jun 11, 2015  
Page 1 of 6  

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