Datasheet > 2SK2855_07

2SK2855_07

更新时间： 2024-11-29 04:26:27

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体放大器晶体管场效应晶体管
页数	文件大小	规格书
4页	153K
描述
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION

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中文翻译

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2SK2855_07 数据手册

2SK2855

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

2SK2855

UHF BAND AMPLIFIER APPLICATION

Unit in mm

(Note)The TOSHIBA products listed in this document are intended for high

frequency Power Amplifier of telecommunications equipment.These TOSHIBA

products are neither intended nor warranted for any other use.Do not use

these TOSHIBA products listed in this document except for high frequency

Power Amplifier of telecommunications equipment.

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

RATING

UNIT

±6

DSS

Gate-Source Voltage

Drain Current

GSS

1.0

Drain Power Dissipation

Channel Temperature

Storage Temperature Range

(Note 1)

0.5

°C

150

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

JEDEC

JEITA

—

SC−62

2−5K1D

TOSHIBA

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Tc = 25°C When mounted on a 1.6mm glass epoxy PCB

MARKING

Part No. (or abbreviation code)

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Lot No.

1. Gate

2. Source

3. Drain

Caution: This device is sensitive to electrostatic discharge.

Please make enough tool and equipment earthed when you handle.

2007-11-01

12 3 4

中文翻译

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