型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2854_07 | TOSHIBA |
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FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION |
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2SK2855 | TOSHIBA |
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N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATION) |
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2SK2855_07 | TOSHIBA |
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FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION |
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2SK2856 | TOSHIBA |
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N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
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2SK2857 | NEC |
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N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
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2SK2857 | KEXIN |
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MOS Field Effect Transistor |
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2SK2857 | TYSEMI |
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Can be driven by a 5V power source. Low On-state resistance : RDS(on)1 = 220 m MAX |
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2SK2857-AZ | NEC |
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Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-o |
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2SK2857C | RENESAS |
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N-CHANNEL MOSFET FOR SWITCHING |
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2SK2857C-T1-AY | RENESAS |
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N-CHANNEL MOSFET FOR SWITCHING |
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