2SK2851

更新时间： 2024-11-28 22:52:55

品牌	Logo	应用领域
日立 - HITACHI		晶体开关小信号场效应晶体管电源开关
页数	文件大小	规格书
10页	52K
描述
Silicon N Channel MOS FET High Speed Power Switching

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2SK2851 数据手册

2SK2851

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-478

1st. Edition

Features

•

Low on-resistance

R_DS(on)= 0.055Ω typ. (at V_GS= 10 V, I_D= 2.5 A)

•

4V gate drive devices.

Large current capacitance

I_D= 5 A

Outline

TO-92MOD.

1. Source

2. Drain

3. Gate

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
2SK2851TZ-E	RENESAS	获取价格	5000mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, SC-51, TO-92MOD, 3 PIN
2SK2854	TOSHIBA	获取价格	N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATIONS)
2SK2854_07	TOSHIBA	获取价格	FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION
2SK2855	TOSHIBA	获取价格	N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATION)
2SK2855_07	TOSHIBA	获取价格	FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION
2SK2856	TOSHIBA	获取价格	N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
2SK2857	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SK2857	KEXIN	获取价格	MOS Field Effect Transistor
2SK2857	TYSEMI	获取价格	Can be driven by a 5V power source. Low On-state resistance : RDS(on)1 = 220 m MAX
2SK2857-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-o