Datasheet > 2SK2508_09

2SK2508_09

更新时间： 2024-11-16 07:32:19

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器开关电机
页数	文件大小	规格书
6页	417K
描述
Switching Regulator and DC−DC Converter and Motor Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK2508_09 数据手册

2SK2508

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2508

Switching Regulator and DC−DC Converter and Motor

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.18 Ω (typ.)

DS (ON)

: |Y | = 13 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 250 V)

DSS

: V = 1.5 to 3.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

250

±20

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

JEDEC

JEITA

―

148

SC-67

2-10R1B

(Note 2)

Avalanche current

4.5

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.9 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

2.78

62.5

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 50 V, T = 25°C (initial), L = 1.48 mH, R = 25 Ω, I

= 13 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

下载PDF

与2SK2508_09相关器件

型号	品牌	获取价格	描述	数据表
2SK2509	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2.5A I(D) \| TO-221VAR
2SK2510	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2510-AZ	NEC	获取价格	Power Field-Effect Transistor, 40A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
2SK2511	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2511-A	NEC	获取价格	Power Field-Effect Transistor, 40A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta
2SK2512	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2513	NEC	获取价格	Power Field-Effect Transistor, 45A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Met
2SK2513Z	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 45A I(D) \| TO-262AA
2SK2513-Z	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 45A I(D) \| TO-262AA
2SK2514	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

与2SK2508_09相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

14
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

8
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

36
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

31

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK2508_09

2SK2508_09 数据手册

与2SK2508_09相关器件

与2SK2508_09相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK2508_09

2SK2508_09 数据手册

与2SK2508_09相关器件

与2SK2508_09相关文章

您还可以找

您在本页遇到什么问题？