生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.83 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 900 V |
最大漏极电流 (Abs) (ID): | 5 A | 最大漏极电流 (ID): | 5 A |
最大漏源导通电阻: | 3.6 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 60 W |
最大脉冲漏极电流 (IDM): | 20 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2527-01MR | FUJI |
获取价格 |
N-channel MOS-FET | |
2SK2528-01 | FUJI |
获取价格 |
N-channel MOS-FET | |
2SK2529 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK2529 | RENESAS |
获取价格 |
Silicon N Channel MOS FET | |
2SK2529-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET | |
2SK2530 | SANYO |
获取价格 |
Ultrahigh-Speed Switching Applications | |
2SK2531 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK2532 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 10A I(D) | |
2SK2533 | SANYO |
获取价格 |
N?`???l??MOS?`?V???R???d???????g?????W?X?^� ???????X?C?b?`???O� | |
2SK2534 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 16A I(D) |