是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | TO-3P, MP-88, 3 PIN | Reach Compliance Code: | compliant |
风险等级: | 5.91 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 40 A |
最大漏源导通电阻: | 0.04 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 160 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2511-A | NEC |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta | |
2SK2512 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK2513 | NEC |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Met | |
2SK2513Z | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 45A I(D) | TO-262AA | |
2SK2513-Z | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 45A I(D) | TO-262AA | |
2SK2514 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK2514-A | NEC |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Met | |
2SK2515 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK2515 | RENESAS |
获取价格 |
50A, 60V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, MP-88, 3 PIN | |
2SK2515-A | NEC |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Met |