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2SK2511 PDF预览

2SK2511

更新时间: 2024-11-15 22:52:55
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日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 117K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK2511 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TO-3P, MP-88, 3 PINReach Compliance Code:compliant
风险等级:5.91Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):40 A
最大漏源导通电阻:0.04 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):160 A认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK2511 数据手册

 浏览型号2SK2511的Datasheet PDF文件第2页浏览型号2SK2511的Datasheet PDF文件第3页浏览型号2SK2511的Datasheet PDF文件第4页浏览型号2SK2511的Datasheet PDF文件第5页浏览型号2SK2511的Datasheet PDF文件第6页浏览型号2SK2511的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2511  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SK2511 is N-Channel MOS Field Effect Transistor designed  
for high current switching applications.  
(in millimeter)  
4.7 MAX.  
1.5  
FEATURES  
15.7 MAX. 3.ꢀ 0.ꢀ  
4
Super Low On-Resistance  
RDS (on)1 = 27 m(VGS = 10 V, ID = 20 A)  
RDS (on)2 = 40 m(VGS = 4 V, ID = 20 A)  
Low Ciss  
Built-in G-S Protection Diode  
Ciss = 1 210 pF TYP.  
1
3
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Drain to Source Voltage  
VDSS  
VGSS  
ID (DC)  
60  
V
V
ꢀ.ꢀ 0.ꢀ  
1.0 0.ꢀ  
0.6 0.1  
ꢀ.8 0.1  
Gate to Source Voltage  
Drain Current (DC)  
±20  
±40  
5.45  
5.45  
1. Gate  
ꢀ. Drain  
3. Source  
A
Drain Current (pulse)*  
ID (pulse) ±160  
A
4. Fin (Drain)  
Total Power Dissipation (Tc = 25 ˚C)  
Total Power Dissipation (TA = 25 ˚C)  
Channel Temperature  
PT1  
PT2  
Tch  
80  
3.0  
150  
W
W
˚C  
MP-88  
Storage Temperature  
Tstg –55 to +150 ˚C  
Drain  
*
PW 10 µs, Duty Cycle 1 %  
Body  
Diode  
Gate  
Gate Protection  
Diode  
Source  
The diode connected between the gate and source of the  
transistor serves as a protector against ESD. When this device is  
actually used, an additional protection circuit is externally re-  
quired if a voltage exceeding the rated voltage may be applied to  
this device.  
Document No. D10295EJ1V0DS00 (1st edition)  
Date Published August 1995  
Printed in Japan  
P
1995  
©

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