N-channel MOS-FET
FAP-II Series
900V 3,6W 5A
80W
> Features
> Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
V
Drain-Source-Voltage
Drain-Gate-Voltage
V
900
DS
V
900
V
DGR
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
I
5
A
D
I
20
30
A
D(puls)
V
V
GS
P
80
W
°C
°C
D
T
150
ch
T
-55 ~ +150
stg
Electrical Characteristics (TC=25°C), unless otherwise specified
-
Item
Symbol
Test conditions
Min.
900
Typ.
3,0
Max.
Unit
V
ID=1mA
ID=1mA
VDS=900V
VGS=0V
VGS=±30V
ID=2,5A
ID=2,5A
VGS=0V
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
V
(BR)DSS
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
V
2,5
3,5
500
1,0
V
GS(th)
I
10
0,2
10
µA
mA
nA
W
DSS
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
I
100
3,6
GSS
VGS=10V
VDS=25V
R
2,7
4,0
750
95
DS(on)
g
2,0
S
fs
VDS=25V
C
1150
145
60
pF
pF
pF
ns
ns
ns
ns
A
iss
VGS=0V
f=1MHz
VCC=600V
ID=5A
Output Capacitance
C
oss
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
C
40
rss
t
20
30
d(on)
t
35
55
r
Turn-Off-Time toff (ton=td(off)+tf)
VGS=10V
RGS=10 W
t
70
110
55
d(off)
t
35
f
Tch=25°C
Avalanche Capability
I
L = 100µH
5
AV
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
0,95
1100
5,5
1,45
V
SD
t
ns
µC
rr
-dIF/dt=100A/µs Tch=25°C
Q
rr
-
Thermal Characteristics
Item
Symbol
Test conditions
channel to air
Min.
Typ.
Max.
62,5
1,56
Unit
°C/W
°C/W
Thermal Resistance
R
th(ch-a)
R
channel to case
th(ch-c)