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2SK2512 PDF预览

2SK2512

更新时间: 2024-11-15 22:52:55
品牌 Logo 应用领域
日电电子 - NEC 开关
页数 文件大小 规格书
8页 84K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK2512 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2512  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSIONS  
(in millimeter)  
The 2SK2512 is N-Channel MOS Field Effect Transistor designed  
for high current switching applications.  
FEATURES  
10.0±0.3  
4.5±0.2  
3.2±0.2  
Low On-Resistance  
2.7±0.2  
RDS (on)1 = 15 m(VGS = 10 V, ID = 23 A)  
RDS (on)2 = 23 m(VGS = 4 V, ID = 23 A)  
Low Ciss  
Ciss = 2 100 pF TYP.  
Built-in G-S Protection Diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
60  
±20  
±45  
±180  
35  
V
V
A
Drain Current (pulse)*  
A
0.7±0.1  
2.54  
1.3±0.2  
2.5±0.1  
0.65±0.1  
Total Power Dissipation (Tc = 25 ˚C)  
Total Power Dissipation (TA = 25 ˚C)  
Channel Temperature  
W
W
˚C  
1.5±0.2  
2.54  
PT2  
2.0  
Tch  
150  
1. Gate  
2. Drain  
3. Source  
Storage Temperature  
Tstg –55 to +150 ˚C  
*
PW 10 µs, Duty Cycle 1 %  
1
2 3  
MP-45F (ISOLATED TO-220)  
Drain  
Body  
Diode  
Gate  
The diode connected between the gate and source of the transistor  
Gate  
Protection  
Diode  
serves as a protector against ESD. When this device is actually used,  
an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
Source  
Document No. D10291EJ1V0DS00 (1st edition)  
Date Published August 1995  
Printed in Japan  
P
1995  
©

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