2SK2508(Q)

更新时间： 2024-11-20 13:04:27

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器开关电机
页数	文件大小	规格书
6页	725K
描述
TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,13A I(D),TO-220AB

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中文翻译

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技术参数
数据手册

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2SK2508(Q) 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.76	配置：	Single
最大漏极电流 (Abs) (ID)：	13 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	45 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

2SK2508(Q) 数据手册

2SK2508

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2508

Switching Regulator and DC−DC Converter and Motor

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.18 Ω (typ.)

DS (ON)

: |Y | = 13 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 250 V)

DSS

: V = 1.5~3.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

250

±20

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

JEDEC

JEITA

―

148

(Note 2)

SC-67

2-10R1B

Avalanche current

4.5

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.9 g (typ.)

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

2.78

62.5

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 50 V, T = 25°C (initial), L = 1.48 mH, R = 25 Ω, I

= 13 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-21

12 3 4 5 6

中文翻译

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与2SK2508(Q)相关器件

型号	品牌	获取价格	描述	数据表
2SK2508_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator and DC−DC Converter and Motor Applica
2SK2508_09	TOSHIBA	获取价格	Switching Regulator and DC−DC Converter and Motor Applications
2SK2509	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2.5A I(D) \| TO-221VAR
2SK2510	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2510-AZ	NEC	获取价格	Power Field-Effect Transistor, 40A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
2SK2511	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2511-A	NEC	获取价格	Power Field-Effect Transistor, 40A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta
2SK2512	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2513	NEC	获取价格	Power Field-Effect Transistor, 45A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Met
2SK2513Z	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 45A I(D) \| TO-262AA

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