生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 15 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 60 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1270 | HITACHI |
获取价格 |
SILICON N-CHANNEL MOSFET HIGH SPEEED POWER SWITCHING | |
2SK1271 | NEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT POWER TRANSISTOR | |
2SK1271-A | NEC |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 1400V, 4ohm, 1-Element, N-Channel, Silicon, Metal- | |
2SK1272 | NEC |
获取价格 |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING | |
2SK1272-AZ | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-o | |
2SK1273 | NEC |
获取价格 |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING | |
2SK1273 | KEXIN |
获取价格 |
MOS Field Effect Transistor | |
2SK1273 | TYSEMI |
获取价格 |
Directly driver by Ics having a 5V power source. Has low on-satate resistance | |
2SK1273-AY | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2A I(D),SOT-89 | |
2SK1273-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 60V, 1ohm, 1-Element, N-Channel, Silicon, Metal-ox |