N-channel MOS-FET
2SK1278
F-V Series
500V 1,1W 10A 100W
> Features
> Outline Drawing
- Include Fast Recovery Diode
- High Voltage
- Low Driving Power
> Applications
- Motor Control
- Inverters
- Choppers
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
V
Drain-Source-Voltage
V
500
DS
Continous Drain Current
Pulsed Drain Current
I
10
40
A
D
I
A
D(puls)
Continous Reverse Drain Current
Gate-Source-Voltage
I
10
A
DR
V
±20
V
GS
Max. Power Dissipation
Operating and Storage Temperature Range
P
100
W
°C
°C
D
T
150
ch
T
-55 ~ +150
stg
Electrical Characteristics (TC=25°C), unless otherwise specified
-
Item
Symbol
Test conditions
Min.
500
2,1
Typ.
3,0
Max.
Unit
V
ID=1mA
VGS=0V
VDS=VGS
Tch=25°C
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
V
(BR)DSS
ID=10mA
VDS=500V
V
4,0
V
GS(th)
I
10
500
µA
DSS
VGS=0V
VGS=±20V
ID=5A
VDS=0V
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
I
10
0,8
8
100
1,1
nA
W
S
GSS
VGS=10V
VDS=25V
R
DS(on)
ID=5A
g
4
fs
VDS=25V
C
1100
140
75
1600
210
110
40
pF
pF
pF
ns
ns
ns
ns
V
iss
VGS=0V
f=1MHz
VCC=300V
ID=10A
Output Capacitance
C
oss
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
C
rss
t
25
d(on)
t
60
90
r
Turn-Off-Time toff (ton=td(off)+tf)
VGS=10V
RGS=25 W
t
200
90
300
140
1,8
d(off)
t
f
IF=IDR VGS=0V Tch=25°C
IF=IDR VGS=0V
Diode Forward On-Voltage
Reverse Recovery Time
V
0,95
150
SD
t
200
ns
rr
-dIF/dt=100A/µs Tch=25°C
-
Thermal Characteristics
Item
Symbol
Test conditions
channel to air
Min.
Typ.
Max.
35
Unit
Thermal Resistance
R
°C/W
th(ch-a)
R
channel to case
1,25 °C/W
th(ch-c)
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com