2SK1278

更新时间： 2024-11-20 22:45:07

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
2页	191K
描述
N-channel MOS-FET

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中文翻译

获取价格

数据手册

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2SK1278 数据手册

N-channel MOS-FET

2SK1278

F-V Series

500V 1,1W 10A 100W

> Features

> Outline Drawing

- Include Fast Recovery Diode

- High Voltage

- Low Driving Power

> Applications

- Motor Control

- Inverters

- Choppers

> Maximum Ratings and Characteristics

> Equivalent Circuit

- Absolute Maximum Ratings (TC=25°C), unless otherwise specified

Item

Symbol

Rating

Unit

Drain-Source-Voltage

500

Continous Drain Current

Pulsed Drain Current

D(puls)

Continous Reverse Drain Current

Gate-Source-Voltage

±20

Max. Power Dissipation

Operating and Storage Temperature Range

100

°C

150

-55 ~ +150

stg

Electrical Characteristics (T_C=25°C), unless otherwise specified

Item

Symbol

Test conditions

Min.

500

2,1

Typ.

3,0

Max.

Unit

I_D=1mA

V_GS=0V

V_DS=V_GS

T_ch=25°C

Drain-Source Breakdown-Voltage

Gate Threshhold Voltage

Zero Gate Voltage Drain Current

(BR)DSS

I_D=10mA

V_DS=500V

4,0

GS(th)

500

µA

DSS

V_GS=0V

V_GS=±20V

I_D=5A

V_DS=0V

Gate Source Leakage Current

Drain Source On-State Resistance

Forward Transconductance

Input Capacitance

0,8

100

1,1

GSS

V_GS=10V

V_DS=25V

DS(on)

I_D=5A

V_DS=25V

1100

140

1600

210

110

iss

V_GS=0V

f=1MHz

V_CC=300V

I_D=10A

Output Capacitance

oss

Reverse Transfer Capacitance

Turn-On-Time t_on(t_on=t_d(on)+t_r)

rss

d(on)

Turn-Off-Time t_off(t_on=t_d(off)+t_f)

V_GS=10V

R_GS=25 W

200

300

140

1,8

d(off)

I_F=I_DRV_GS=0V T_ch=25°C

I_F=I_DRV_GS=0V

Diode Forward On-Voltage

Reverse Recovery Time

0,95

150

200

-dI_F/dt=100A/µs T_ch=25°C

Thermal Characteristics

Item

Symbol

Test conditions

channel to air

Min.

Typ.

Max.

Unit

Thermal Resistance

°C/W

th(ch-a)

channel to case

1,25 °C/W

th(ch-c)

Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com

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