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2SK1273

更新时间: 2024-11-21 12:53:23
品牌 Logo 应用领域
TYSEMI 晶体驱动器晶体管开关脉冲
页数 文件大小 规格书
1页 250K
描述
Directly driver by Ics having a 5V power source. Has low on-satate resistance

2SK1273 数据手册

  
TransistIoCrs  
Product specification  
2SK1273  
SOT-89  
Unit: mm  
+0.1  
4.50  
-0.1  
+0.1  
1.50  
-0.1  
Features  
+0.1  
1.80  
-0.1  
Directly driver by Ics having a 5V power source.  
Has low on-satate resistance  
RDS(on)=1.00 MAX.@VGS=4.0V,ID=0.5A  
RDS(on)=0.65 MAX.@VGS=10V,ID=0.5A  
Not necessary to consider driving current because  
of its high input impedance.  
3
0.53  
2
1
+0.1  
0.48  
-0.1  
+0.1  
-0.1  
+0.1  
0.44  
-0.1  
Possible to reduce the number of parts by omitting the biasresistor.  
1 Gate  
+0.1  
3.00  
-0.1  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
60  
20  
Gate to source voltage  
Drain current (DC)  
V
A
2.0  
Drain current(pulse) *  
Power dissipation  
ID  
A
4.0  
PD  
2.0  
W
Channel temperature  
Storage temperature  
* PW 10ms, duty cycle  
Tch  
150  
Tstg  
-55 to +150  
50%  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
VDS=60V,VGS=0  
Min  
Typ  
1.7  
Max  
10  
Unit  
A
Drain cut-off current  
IDSS  
IGSS  
Gate leakage current  
VGS= 20V,VDS=0  
10  
A
Gate to source cutoff voltage  
Forward transfer admittance  
VGS(off) VDS=10V,ID=1mA  
1.0  
0.4  
2.5  
V
VDS=10V,ID=0.5A  
VGS=4.0V,ID=0.5A  
VGS=10V,ID=0.5A  
s
Yfs  
0.31 1.00  
Drain to source on-state resistance  
RDS(on)  
0.24 0.65  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Ciss  
Coss  
Crss  
td(on)  
tr  
220  
105  
16  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS=10V,VGS=0,f=1MHZ  
15  
35  
ID=0.5A,VGS(on)=10V,RL=50  
,VDD=25V,RG=10  
Turn-off delay time  
Fall time  
td(off)  
tf  
380  
120  
Marking  
Marking  
NA  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 1  
4008-318-123  

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