生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.76 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 1400 V |
最大漏极电流 (ID): | 5 A | 最大漏源导通电阻: | 4 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 10 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1272 | NEC |
获取价格 |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING | |
2SK1272-AZ | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-o | |
2SK1273 | NEC |
获取价格 |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING | |
2SK1273 | KEXIN |
获取价格 |
MOS Field Effect Transistor | |
2SK1273 | TYSEMI |
获取价格 |
Directly driver by Ics having a 5V power source. Has low on-satate resistance | |
2SK1273-AY | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2A I(D),SOT-89 | |
2SK1273-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 60V, 1ohm, 1-Element, N-Channel, Silicon, Metal-ox | |
2SK1273-T1-AY | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2A I(D),SOT-89 | |
2SK1273-T2 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2A I(D),SOT-89 | |
2SK1274 | NEC |
获取价格 |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |