生命周期: | Obsolete | 零件包装代码: | TO-3P |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Is Samacsys: | N | 其他特性: | FREDFET |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 15 A | 最大漏源导通电阻: | 0.58 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 125 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 840 ns |
最大开启时间(吨): | 195 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK128 | PANASONIC |
获取价格 |
SI N CHANNEL JUNCTION | |
2SK1280 | FUJI |
获取价格 |
N-Channel MOS-FET(500V, 0.5Ohm, 18A, 150W) | |
2SK1282 | ETC |
获取价格 |
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2SK1282-AZ | RENESAS |
获取价格 |
Silicon N Channel MOSFET, MP-3, /Bag | |
2SK1282-Z | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252VAR | |
2SK1282-Z-E1 | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, Silicon, MP-3Z, SC-63, 3 PIN | |
2SK1282-Z-E1 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,3A I(D),TO-252VAR | |
2SK1282-Z-E2 | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, Silicon, MP-3Z, SC-63, 3 PIN | |
2SK1282-Z-T1 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,3A I(D),TO-252VAR | |
2SK1282-Z-T2 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,3A I(D),TO-252VAR |