2SK118-R

更新时间： 2024-11-23 12:59:31

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东芝 - TOSHIBA		转换器
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数据手册

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2SK118-R 数据手册

2SK118

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK118

General Purpose and Impedance Converter and

Condenser Microphone Applications

Unit: mm

•

High breakdown voltage: V

= −50 V

GDS

High input impedance: I

= −1 nA (max) (V

= −30 V)

GSS

Low noise: NF = 0.5dB (typ.) (R = 100 kΩ, f = 120 Hz)

Small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Gate-drain voltage

Symbol

Rating

Unit

−50

GDS

Gate current

°C

Drain power dissipation

Junction temperature

Storage temperature range

100

125

stg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-4E1B

Weight: 0.13 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate cut-off current

Symbol

Test Condition

Min

Typ.

Max

Unit

= −30 V, V

= 0

⎯

−1.0

GSS

Gate-drain breakdown voltage

= 0, I = −100 μA

−50

⎯

(BR) GDS

DSS

(Note)

Drain current

= 10 V, V

= 0

0.3

⎯

6.5

Gate-source cut-off voltage

Forward transfer admittance

Input capacitance

= 10 V, I = 0.1 μA

−0.4

1.2

⎯

−5.0

⎯

GS (OFF)

⎪Y ⎪

= 10 V, V

= 0, f = 1 kHz

= 0, f = 1 MHz

8.2

2.6

⎯

iss

rss

Reverse transfer capacitance

= −10 V, I = 0, f = 1 MHz

⎯

= 15 V, V

= 0, R = 100 kΩ,

Noise figure

⎯

0.5

5.0

f = 120 Hz

Note: I

classification R: 0.3~0.75 mA, O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA

DSS

2007-11-01

12 3 4

中文翻译

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