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2SK1215-D PDF预览

2SK1215-D

更新时间: 2024-11-26 13:04:27
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器
页数 文件大小 规格书
6页 140K
描述
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET

2SK1215-D 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.01
配置:SINGLE最大漏极电流 (ID):0.03 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最小功率增益 (Gp):24 dB认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SK1215-D 数据手册

 浏览型号2SK1215-D的Datasheet PDF文件第2页浏览型号2SK1215-D的Datasheet PDF文件第3页浏览型号2SK1215-D的Datasheet PDF文件第4页浏览型号2SK1215-D的Datasheet PDF文件第5页浏览型号2SK1215-D的Datasheet PDF文件第6页 
2SK1215  
Silicon N-Channel MOS FET  
REJ03G0813-0200  
(Previous ADE-208-1176)  
Rev.2.00  
Aug.10.2005  
Application  
VHF amplifier  
Outline  
RENESAS Package code: PTSP0003ZA-A  
R
(Package name: CMPAK  
)
3
1. Gate  
2. Drain  
3. Source  
1
2
*CMPAK is a trademark of Renesas Technology Corp.  
Rev.2.00 Aug 10, 2005 page 1 of 5  

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