生命周期: | Contact Manufacturer | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.01 |
配置: | SINGLE | 最大漏极电流 (ID): | 0.03 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最高频带: | VERY HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最小功率增益 (Gp): | 24 dB | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1215E | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-323 | |
2SK1215-E | HITACHI |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK1215F | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-323 | |
2SK1215-F | HITACHI |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK1215IGD | RENESAS |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET | |
2SK1215IGDTL | RENESAS |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK1215IGDTR | RENESAS |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK1215IGDUL | RENESAS |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK1215IGDUR | RENESAS |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, CMPAK-3 | |
2SK1215IGE | HITACHI |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |