2SD638S

更新时间： 2024-11-25 13:04:23

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中文翻译

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数据手册

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2SD638S 数据手册

Transistor

2SD638, 2SD639

Silicon NPN epitaxial planer type

For medium-power general amplification

Complementary to 2SB643 and 2SB644

Unit: mm

6.9±0.1

2.5±0.1

1.5

1.5 R0.9

1.0

Features

■

R0.9

●

Low collector to emitter saturation voltage V_CE(sat)

●

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R0.7

0.85

Absolute Maximum Ratings (Ta=25˚C)

■

0.55±0.1

0.45±0.05

Parameter

Symbol

Ratings

Unit

Collector to

2SD638

2SD639

2SD638

V_CBO

base voltage

Collector to

V_CEO

emitter voltage 2SD639

Emitter to base voltage

Peak collector current

Collector current

2.5

V_EBO

I_CP

I_C

1:Base

0.5

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

600

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

0.1

Unit

µA

V_CB= 20V, I_E= 0

Collector cutoff current

I_CEO

V_CE= 20V, I_B= 0

µA

Collector to base

voltage

2SD638

2SD639

V_CBO

I_C= 10µA, I_E= 0

Collector to emitter 2SD638

V_CEO

V_EBO

I_C= 2mA, I_B= 0

voltage

2SD639

Emitter to base voltage

I_E= 10µA, I_C= 0

h_FE1

h_FE2

V_CE= 10V, I_C= 10mA

V_CE= 10V, I_C= 500mA^*2

I_C= 300mA, I_B= 30mA

160

340

0.6

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

0.35

200

MHz

Transition frequency

f_T

V_CB= 10V, I_E= –50mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

中文翻译

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与2SD638S相关器件

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2SD639R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3
2SD639S	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3
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