2SD639

更新时间： 2024-02-19 15:45:27

品牌	Logo	应用领域
松下 - PANASONIC		晶体小信号双极晶体管放大器
页数	文件大小	规格书
2页	42K
描述
Silicon PNP epitaxial planer type(For low-power general amplification)

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技术参数
数据手册

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2SD639 技术参数

生命周期：	Obsolete	包装说明：	IN-LINE, R-PSIP-T3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.84	最大集电极电流 (IC)：	0.5 A
集电极-发射极最大电压：	50 V	配置：	SINGLE
最小直流电流增益 (hFE)：	170	JESD-30 代码：	R-PSIP-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	200 MHz	Base Number Matches：	1

2SD639 数据手册

Transistor

2SB643, 2SB644

Silicon PNP epitaxial planer type

For low-power general amplification

Unit: mm

Complementary to 2SD638 and 2SD639

6.9±0.1

2.5±0.1

1.5

1.5 R0.9

1.0

Features

R0.9

■

●

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R0.7

Absolute Maximum Ratings (Ta=25˚C)

■

0.85

Parameter

Symbol

Ratings

–30

Unit

0.55±0.1

0.45±0.05

Collector to

2SB643

2SB644

2SB643

V_CBO

base voltage

Collector to

–60

–25

V_CEO

emitter voltage 2SB644

Emitter to base voltage

Peak collector current

Collector current

–50

2.5

V_EBO

I_CP

I_C

–7

–1

1:Base

– 0.5

600

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–100

–1

Unit

V_CB= –20V, I_E= 0

Collector cutoff current

I_CEO

V_CE= –20V, I_B= 0

µA

Collector to base

voltage

2SB643

2SB644

2SB643

2SB644

–30

–60

–25

–50

–7

V_CBO

I_C= –10µA, I_E= 0

Collector to emitter

voltage

V_CEO

V_EBO

I_C= –2mA, I_B= 0

Emitter to base voltage

I_E= –10µA, I_C= 0

h_FE1

h_FE2

V_CE= –10V, I_C= –150mA^*2

V_CE= –10V, I_C= –500mA^*2

I_C= –300mA, I_B= –30mA^*2

340

– 0.6

Forward current transfer ratio

– 0.35

200

Collector to emitter saturation voltage V_CE(sat)

MHz

Transition frequency

f_T

V_CB= –10V, I_E= 10mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

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