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2SD655

更新时间: 2024-11-26 14:49:19
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
1页 20K
描述
小信号晶体管

2SD655 数据手册

  
2SD655  
NPN Silicon Epitaxial Planar Transistor  
for switching and AF amplifier applications.  
The transistor is subdivided into three groups, D,  
E and F, according to its DC current gain.  
On special request, these transistors can be  
manufactured in different pin configurations.  
1. Emitter 2. Collector 3. Base  
TO-92 Plastic Package  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
30  
V
V
15  
5
V
Collector Current  
700  
mA  
mA  
mW  
Collector Peak Current  
Power Dissipation  
ICP  
1000  
500  
Ptot  
O
Junction Temperature  
Storage Temperature Range  
Tj  
150  
C
O
C
Tstg  
- 55 to + 150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at VCE = 1 V, IC = 150 mA  
Current Gain Group  
D
E
F
hFE  
hFE  
hFE  
250  
400  
600  
-
-
-
500  
800  
1200  
-
-
-
Collector Base Cutoff Current  
at VCB = 20 V  
Collector to Base Breakdown Voltage  
at IC = 10 µA  
Collector to Emitter Breakdown Voltage  
at IC = 1 mA  
Emitter Base Breakdown Voltage  
at IE = 10 µA  
Collector Emitter Saturation Voltage  
at IC = 500 mA, IB = 50 mA  
Base Emitter Voltage  
at VCE = 1 V, IC = 150 mA  
Gain Bandwidth Product  
at VCE = 1 V, IC = 150 mA  
ICBO  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
VCE(sat)  
VBE  
-
30  
15  
5
-
1
-
µA  
V
-
-
-
-
V
-
V
-
0.15  
-
0.5  
1
-
V
-
V
fT  
-
250  
MHz  
®
Dated : 20/08/2016 Rev: 01  

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