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2SD649 PDF预览

2SD649

更新时间: 2024-11-25 06:19:55
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 191K
描述
Silicon NPN Power Transistor

2SD649 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Is Samacsys:NBase Number Matches:1

2SD649 数据手册

 浏览型号2SD649的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SD649  
DESCRIPTION  
·High Breakdown Voltage-  
: VCBO= 1500V (Min)  
·High Reliability  
APPLICATIONS  
·Designed for line-operated horizontal deflection output  
applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCES  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
1500  
1500  
5
UNIT  
V
V
V
Collector Current- Continuous  
Collector Current-Pulse  
3
A
ICP  
5
A
Collector Power Dissipation  
@ TC90℃  
PC  
35  
W
TJ  
Junction Temperature  
130  
-65~130  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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