Datasheet > 2SD600

2SD600

更新时间： 2024-10-31 22:35:55

品牌	Logo	应用领域
三洋 - SANYO		放大器功率放大器
页数	文件大小	规格书
4页	128K
描述
100V/120V, 1A Low-Frequency Power Amplifier Applications

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数据手册

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2SD600 数据手册

Ordering number:346G

PNP/NPN Epitaxial Planar Silicon Transistor

2SB631,631K/2SD600,600K

100V/120V, 1A Low-Frequency

Power Amplifier Applications

Features

Package Dimensions

unit:mm

· High breakdown voltage V

current 1A.

100/120V, High

CEO

2009B

· Low saturation voltage, excellent h linearity.

[2SB631, 631K/2SD600, 600K]

1 : Emitter

2 : Collector

3 : Base

( ) : 2SB631, 631K

JEDEC : TO-126

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

2SB631, D600

(–)100

2SB631K, D600K

(–)120

Unit

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

(–)120

CEO

(–)5

EBO

(–)1

Collector Current (Pulse)

Collector Dissipation

(–)2

˚C

Tc=25˚C

150

Junction Temperature

Storage Temperature

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector-to-Base Breakdown Voltage

=(–)10µA, I =0

B631, D600

(–)100

(–)120

(–)100

(–)120

(–)5

(BR)CBO

(BR)CEO

(BR)EBO

B631K, D600K

B631, D600

Collector-to-Emitter Brakdown Voltage

=(–)1mA, R =∞

B631K, D600K

Emitter-to-Base Breakdown Voltage

Collector Cutoff Current

I =(–)10µA, I =0

=(–)50V, I =0

=(–)4V, I =0

(–)1

µA

CBO

Emitter Cutoff Current

EBO

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

91098HA (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346–1/4

12 3 4

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