Datasheet > 2SD601A_11

2SD601A_11

更新时间： 2022-09-18 11:22:15

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描述
NPN Plastic-Encapsulate Transistor

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2SD601A_11 数据手册

2SD601A

0.1A , 60V

NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-23

FEATURE

ꢀ

High forward current transfer ratio h_FE

Low collector to emitter saturation voltage V_CE(sat)

ꢀ

Top View

C B

CLASSIFICATION OF h_FE

Product-Rank

2SD601A-Q

160~260

2SD601A-R

2SD601A-S

290~460

Range

210~340

Marking Code

Millimeter

Min. Max.

PACKAGE INFORMATION

REF.

Min.

Max.

3.04

2.55

1.40

1.15

2.04

0.50

2.80

2.10

1.20

0.89

1.78

0.30

0.09

0.45

0.08

0.18

0.60

0.177

Package

MPQ

LeaderSize

7’ inch

0.6 REF.

SOT-23

0.89

1.02

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

100

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

°C

P_C

200

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min.

Typ. Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=10µA, I_E=0

I_C=2mA, I_B=0

I_E=10µA, I_C=0

0.1

100

0.3

460

µA

V_CB=20V, I_E=0

Emitter Cut-Off Current

I_EBO

V_EB=10V, I_C=0

Collector to Emitter Saturation Voltage

V_CE(sat)

h_{FE (1)}

h_{FE (2)}

f_T

I_C=100mA, I_B=10mA

V_CE=10V, I_C=2mA

V_CE=2V, I_C=100mA

160

DC Current Gain

Transition Frequency

150

3.5

MHz V_CE=10V, I_C=2mA, f=200MHz

Collector Output Capacitance

C_ob

V_CB=10V, I_E=0, f=1MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

04-Mar-2011 Rev. B

Page 1 of 1

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