Datasheet > 2SD601LT1

2SD601LT1

更新时间： 2022-06-04 20:39:33

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
1页	71K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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2SD601LT1 数据手册

RoHS

2SD601LT1

NP N EP ITAXIAL S ILICON TRANS IS TOR

PRE-AMPLIFIER,LOW LEVEL&LOW NOISE

Complement to S9015LT1

Collector Current: Ic= 100mA

Collector-Emitter Voltage:Vce= 45V

High Total Power Dissipation:Pc=225mW

High Hfe And Good Linearity

1.GATE

2.SOURCER

3.DRAIE

2.4

1.3

ABSOLUTE MAXIMUM RATINGS at Ta=25

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Symbol

Vcbo

Vceo

Vebo

Rating

Unit

Unit:mm

100

225

Collector Dissipation Ta=25

P_D

Junction Temperature

Storage Temperature

150

Tstg

-55-150

ELECTRICAL CHARACTERISTICS at Ta=25

Characteristic

Symbol Min Typ

Max Unit

Test Conditions

Ic=100uA Ie=0

Ic= 1mA Ib=0

Collector-Base Breakdown Voltage

BVcbo

BVceo

Collector-Emitter

Voltage#

Breakdown

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

DC Current Gain

BVebo

Icbo

Ie= 100uA Ic=0

Vcb= 50V Ie=0

Iebo

Hfe

Veb= 5V Ic= 0

135 270 1000

Vce= 5V Ic= 1mA

Ic= 100mA Ib= 5mA

Vce= 5V Ic= 2mA

Vcb= 10V Ie=0 f=1MHz

Collector-Emitter Saturation Voltage Vce(sat)

0.3

Base-Emitter Saturation Voltage

Base-Emitter on Voltage

Output Capacitance

Vbe(sat)

Vbe(on) 0.58 0.63

1.00

o.7

3.5

Cob

f_T

2.2

Current Gain-Bandwidth Product

Noise Figure

150 270

MHz Vce= 5V Ic= 10mA

Vce= 5V Ic= 0.2mA

f=1KHz Rs=2Kohm

Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25

Pulse Test : Pulse Width 300uS,Duty cycle 2%

DEVICE MARKING:

2SD601LT1=L5

WEJ ELECTRONIC CO.,LTD

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

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