Datasheet > 2SD602A-HF_15

2SD602A-HF_15

更新时间： 2022-02-26 11:23:29

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描述
NPN Transistors

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2SD602A-HF_15 数据手册

SMD Type

Transistors

NPN Transistors

2SD602A-HF

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● Low Collector to Emitter Saturation Voltage

● Mini Type Package

● Complimentary to 2SB710A-HF

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

+0.1

+0.05

-0.01

0.95

-0.1

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance from Junction to Ambient

Junction Temperature

500

200

625

150

℃/W

RΘJA

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 10 mA， I = 0

= 100μA， I = 0

CB= 50 V , I = 0

EB= 5V , I =0

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

0.1

0.6

1.2

340

Collector-emitter saturation voltage (Note.1)

CE(sat)

BE(sat)

=300 mA, I

=30mA

Base - emitter saturation voltage

(Note.1)

C=300 mA, I

hFE(1)

CE= 10V, I

CB= 10V, I

^CE= 10V, I

= 150mA

= 500mA

DC current gain

(Note.1)

hFE(2)

Collector output capacitance

Transition frequency

Cob

E=0,f=1MHz

C= 50mA,f=200MHz

200

MHz

Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.

■ Classification of hfe(1)

Type

Range

Marking

2SD602A-Q-HF 2SD602A-R-HF 2SD602A-S-HF

85-170 120-240 170-340

XQ XR XS

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