Datasheet > 2SD602A

2SD602A

更新时间： 2023-12-06 20:11:57

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	1082K
描述
双极型晶体管

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2SD602A 数据手册

2SD602A

Silicon Epitaxial Planar Transistor

SOT-23

Min

FEATURES

Dim

Max

3.10

1.50

Complementary to 2SB710A

2.70

PNP Transistor

1.10

Low collector to emitter saturation

voltage V_CE(sat)

1.0 Typical

0.4 Typical

0.35

0.48

2.00

0.1

1.80

0.02

APPLICATIONS

0.1 Typical

General purpose amplifier applications

2.20

2.60

All Dimensions in mm

ORDERING INFORMATION

SOT-23

Type No.

2SD602A

Marking

Package Code

SOT-23

XQ/XR/XS

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CEO

V_EBO

I_C

500

I_CP

Peak collector current

Collector power Dissipation

Junction and Storage Temperature

P_C

200

℃

T_j,T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX UNIT

Collector-base breakdown voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=10μA,I_E=0

I_C=10mA,I_B=0

I_E=10μA,I_C=0

V_CB=20V,I_E=0

Collector-emitter breakdown

voltage

Emitter-base breakdown voltage

Collector cut-off current

0.1

μA

V_CE=10V,I_C=150mA

V_CE=10V,I_C=500mA

160

340

DC current gain

h_FE

Collector-emitter saturation voltage

Transition frequency

I_C=300mA, I_B=30mA

V_CE(sat)

0.35

200

0.6

V_CB=10V, I_E= -50mA,

f=200MHz

f_T

MHz

Output capacitance

V_CB=10V, I_E=0,f=1MHz

C_ob

CLASSIFICATION OF h_FE(1)

Rank

120-240

h_FE1

85-170

170-340

Marking

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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