SMD Type
Transistors
NPN Transistors
2SD601A-HF
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
■ Features
3
● High hFE
● Low VCE(sat)
● For general amplification
● Complimentary to 2SB709A-HF
1
2
+0.1
+0.05
-0.01
0.95
-0.1
0.1
+0.1
-0.1
1.9
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
60
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
50
Emitter - Base Voltage
7
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
I
C
100
200
625
150
mA
P
C
mW
RΘJA
℃/W
T
J
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 100 μA, I = 0
Ic= 2 mA, I = 0
= 100μA, I
Min
60
50
7
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
= 0
ICBO
ICEO
I
EBO
V
V
V
CB= 50 V , I
CE= 30 V , I
EB= 5V , I
E
= 0
= 0
0.1
100
0.1
0.3
1.2
uA
V
B
C
=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=100 mA, I
B
=10mA
=10mA
V
C=100 mA, I
B
h
FE(1)
V
V
V
V
CE= 2V, I
C
= 100mA
= 2mA
=0,f=1MHz
= 2mA,f=200MHz
90
DC current gain
hFE(2)
CE= 10V, I
CB= 10V, I
CE= 10V, I
C
160
460
Collector output capacitance
Transition frequency
C
ob
E
3.5
pF
f
T
C
150
MHz
■ Classification of hfe(2)
Type
Range
Marking
2SD601A-Q-HF 2SD601A-R-HF 2SD601A-S-HF
160-260 210-340 290-460
ZQ ZR ZS
F
F
F
1
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