Datasheet > 2SD601A

2SD601A

更新时间： 2024-11-01 06:16:15

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
1页	175K
描述
NPN Plastic-Encapsulate Transistor

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替代型号

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2SD601A 数据手册

2SD601A

NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

SOT-23

Min

Collector

Dim

Max

Power dissipation

_CM: 0.2 W (T_AMB=25℃)

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

Base

Emitter

Collector current

_CM: 0.1 A

Collector-base voltage

_(BR)CBO: 60 V

Top View

Operating and storage junction temperature range

T_J,T_STG: -55℃ to +150℃

All Dimension in mm

ELECTRICAL CHARACTERISTICS at T_A= 25°C

PARAMETER

TEST CONDITIONS

SYMBOL MIN. TYP. MAX. UNIT

Collector-Base Breakdown Voltage

I_C= 10 µA, I_E= 0

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I_C= 2 mA, I_B= 0

I_E= 10 µA, I_C= 0

V_CB= 20V, I_E= 0

V_EB= 10V, I_C= 0

0.1

100

0.3

μA

Collector Cut-off Current

I_CEO

Collector-Emitter Saturation Voltage

I_C= 100mA, I_B= 10mA

V_CE= 10 V, I_C= 2 mA

V_CE(sat)

h_FE(1)

h_FE(2)

160

460

DC Current Gain

_CE= 2 V, I_C= 100 mA

Transition Frequency

V_CE= 10V, I_C= 2mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

f_T

150

3.5

MHz

Collector Output Capacitance

C_OB

CLASSIFICATION OF h_FE(1)

Rank

210 - 340

290 - 460

Range

Marking

160 - 260

01-June-2005 Rev. A

Page 1 of 1

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2SD601A 替代型号

型号	品牌	替代类型	描述	数据表
2SC1621	NEC	功能相似	HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
2SD601A	PANASONIC	功能相似	Silicon NPN epitaxial planer type
2SD0601A	PANASONIC	功能相似	Silicon NPN epitaxial planer type

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