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2SD601A PDF预览

2SD601A

更新时间: 2024-10-31 22:35:55
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 41K
描述
Silicon NPN epitaxial planer type

2SD601A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.45其他特性:TO-236
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):160
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

2SD601A 数据手册

 浏览型号2SD601A的Datasheet PDF文件第2页 
Transistor  
2SD601A  
Silicon NPN epitaxial planer type  
For general amplification  
Unit: mm  
Complementary to 2SB709A  
2.8 +00..32  
0.65±0.15  
1.5 +00..0255  
0.65±0.15  
Features  
High foward current transfer ratio hFE  
.
Low collector to emitter saturation voltage VCE(sat)  
.
1
2
Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
3
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
0.1 to 0.3  
0.4±0.2  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
60  
50  
V
7
V
200  
mA  
mA  
mW  
˚C  
1:Base  
JEDEC:TO–236  
EIAJ:SC–59  
Mini Type Package  
2:Emitter  
3:Collector  
IC  
100  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
200  
Marking symbol : Z  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
0.1  
Unit  
µA  
µA  
V
VCB = 20V, IE = 0  
Collector cutoff current  
ICEO  
VCE = 10V, IB = 0  
100  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
IC = 10µA, IE = 0  
60  
50  
7
IC = 2mA, IB = 0  
V
IE = 10µA, IC = 0  
V
*
hFE1  
VCE = 10V, IC = 2mA  
160  
90  
460  
0.3  
Forward current transfer ratio  
hFE2  
VCE = 2V, IC = 100mA  
IC = 100mA, IB = 10mA  
VCB = 10V, IE = –2mA, f = 200MHz  
VCE = 10V, IC = 1mA, GV = 80dB  
Rg = 100k, Function = FLAT  
VCB = 10V, IE = 0, f = 1MHz  
Collector to emitter saturation voltage VCE(sat)  
0.1  
V
Transition frequency  
fT  
150  
MHz  
Noise voltage  
NV  
Cob  
110  
3.5  
mV  
pF  
Collector output capacitance  
*hFE1 Rank classification  
Rank  
hFE1  
Q
R
S
160 ~ 260  
ZQ  
210 ~ 340  
ZR  
290 ~ 460  
ZS  
Marking Symbol  
1

2SD601A 替代型号

型号 品牌 替代类型 描述 数据表
2SD601A SECOS

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