Datasheet > 2SD601A

2SD601A

更新时间： 2024-11-01 06:22:35

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描述
Silicon NPN Epitaxial Planer Type

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中文翻译

获取价格

数据手册

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2SD601A 数据手册

SMD Type

TransistIoCrs

Silicon NPN Epitaxial Planer Type

2SD601A

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High foward current transfer ratio hFE.

Low collector to emitter saturation voltage VCE(sat).

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current

100

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

200

P^C

200

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

IC = 20 ìA, IE = 0

Min

Typ

Max

Unit

Collector-base voltage

V^CBO

V^CEO

V^EBO

I^CBO

I^CEO

h^FE

Collector-emitter voltage

Emitter-base voltage

IC = 2 mA, IB = 0

IE = 10 ìA, IC = 0

Collector-base current

VCB = 20 V, IE = 0 A

VCE = 10 V, IB = 0 A

VCE = 10 V, IC = 2 mA

0.1

100

460

0.3

ìA

Collector-emitter current

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

160

V^CE(sat)IC = 100 mA, IB = 10 mA

0.1

150

3.5

f^T

VCB = 10 V, IE = -2 mA , f = 200 MHz

VCB = 10V , IE = 0 , f = 1.0MHz

MHz

Collector output capacitance

C^ob

V^CE= 10V, IC = 1mA, GV = 80dB

R^g= 100kW, Function = FLAT

Noise voltage

110

hFE Classification

Marking

h^FE

290 460

160 260

210 340

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