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2SD600KD PDF预览

2SD600KD

更新时间: 2024-02-22 08:12:42
品牌 Logo 应用领域
无锡固电 - ISC /
页数 文件大小 规格书
4页 195K
描述
Transistor

2SD600KD 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.61Is Samacsys:N
Base Number Matches:1

2SD600KD 数据手册

 浏览型号2SD600KD的Datasheet PDF文件第2页浏览型号2SD600KD的Datasheet PDF文件第3页浏览型号2SD600KD的Datasheet PDF文件第4页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD600 2SD600K  
DESCRIPTION  
·
·With TO-126 package  
·Complement to type 2SB631/631K  
·High breakdown voltage VCEO100/120V  
·High current 1A  
·Low saturation voltage  
APPLICATIONS  
·For low-frequency power amplifier  
applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2SD600  
2SD600K  
2SD600  
2SD600K  
100  
VCBO  
Collector-base voltage  
Open emitter  
V
120  
100  
VCEO  
Collector-emitter voltage  
Open base  
V
120  
VEBO  
IC  
Emitter-base voltage  
Collector current (DC)  
Collector current-peak  
Open collector  
5
V
A
A
1
ICM  
2
Ta=25  
TC=25℃  
1
8
PD  
Total power dissipation  
W
Tj  
Junction temperature  
Storage temperature  
150  
Tstg  
-55~150  

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