Datasheet > 2SD600K-F

2SD600K-F

更新时间： 2024-09-26 14:39:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	91K
描述
TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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技术参数
数据手册

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2SD600K-F 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.41
最大集电极电流 (IC)：	1 A	配置：	Single
最小直流电流增益 (hFE)：	160	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	8 W
子类别：	Other Transistors	表面贴装：	NO
标称过渡频率 (fT)：	130 MHz	Base Number Matches：	1

2SD600K-F 数据手册

Ordering number : ENN346G

PNP/NPN Epitaxial Planar Silicon Transistors

2SB631, 631K/

2SD600, 600K

100V/120V, 1A Low-Frequency

Power Amplifier Applications

Features

Package Dimensions

unit:mm

· High breakdown voltage V

current 1A.

· Low saturation voltage, excellent h linearity.

100/120V, High

CEO

2009B

[2SB631, 631K/2SD600, 600K]

8.0

2.7

4.0

3.0

1.6

0.8

0.6

0.5

1 : Emitter

2 : Collector

3 : Base

( ) : 2SB631, 631K

2.4

4.8

SANYO : TO-126

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

2SB631, D600

(–)100

2SB631K, D600K

(–)120

Unit

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

(–)120

CEO

(–)5

EBO

(–)1

Collector Current (Pulse)

(–)2

˚C

Collector Dissipation

Tc=25˚C

150

Junction Temperature

Storage Temperature

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

B631, D600

(–)100

(–)120

(–)100

(–)120

(–)5

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Brakdown Voltage

=(–)10μA, I =0

(BR)CBO

B631K, D600K

B631, D600

=(–)1mA, R =∞

(BR)CEO

B631K, D600K

Emitter-to-Base Breakdown Voltage

Collector Cutoff Current

I =(–)10μA, I =0

(BR)EBO

=(–)50V, I =0

(–)1

μA

CBO

Emitter Cutoff Current

=(–)4V, I =0

EBO

Continued on next page.

Jan-2011, Rev. 0

Publication Order Number:

2SB631_2SB631K_2SD600_2SD600K/D

www.onsemi.com

12 3 4

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