Datasheet > 2SD601A

2SD601A

更新时间： 2023-12-06 20:10:32

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	685K
描述
SOT-23

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数据手册

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2SD601A 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

2SD601A

TRANSISTOR (NPN)

SOT-23

FEATURE

 High h_FE

 Low V_CE(sat)

1. BASE

 For general amplification

2. EMITTER

 Complementary to 2SB709A

3. COLLECTOR

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

℃/W

℃

P_C

Collector Power Dissipation

200

R_ΘJA

T_J,T_stg

Thermal Resistance from Junction to Ambient

Operation Junction and Storage Temperature Range

625

-55～+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=10µA, I_E=0

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=2mA, I_B=0

I_E=10µA, I_C=0

V_CB=20V, I_E=0

V_CE=10V, I_B=0

V_EB=5V, I_C=0

0.1

100

0.1

µA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

h_FE(1)

h_FE(2)

V_CE(sat)

f_T

V_CE=2V, I_C=100mA

DC current gain

V_CE=10V, I_C=2mA

160

460

0.3

Collector-emitter saturation voltage

Transition frequency

I_C=100mA, I_B=10mA

V_CE=10V,I_C=2mA,f=200MHz

V^CB=10V,I^E=0,f=1MHz

150

3.5

MHz

Collector output capacitance

C^ob

CLASSIFICATION of h_FE(2)

Rank

Range

Marking

210-340

160-260

290-460

www.jscj-elec.com

Rev. - 2.0

12 3 4

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