Datasheet > 2SD1996R

2SD1996R

更新时间： 2024-11-23 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
3页	56K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 500MA I(C) \| SIP

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中文翻译

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数据手册

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2SD1996R 数据手册

Transistor

2SD1996

Silicon NPN epitaxial planer type

Unit: mm

For low-voltage output amplification

For muting

6.9±0.1

4.0

2.5±0.1

1.05

±0.05

(1.45)

0.8

0.7

For DC-DC converter

Features

■

0.65 max.

●

Low collector to emitter saturation voltage V_CE(sat)

●

Low ON resistance R_on.

High foward current transfer ratio h_FE

Allowing supply with the radial taping.

0.45⁺–0⁰.^.0¹5

2.5±0.5 2.5±0.5

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Note: In addition to the

lead type shown in

1:Emitter

2:Collector

the upper figure, the 3:Base

type as shown in

the lower figure is

also available.

MT1 Type Package

0.5

I_C

Collector power dissipation

Junction temperature

Storage temperature

P_C

600

˚C

1.2±0.1

T_j

150

0.65

max.

T_stg

–55 ~ +150

0.1

0.45_–0.05

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CB= 25V, I_E= 0

100

V_CBO

V_CEO

V_EBO

I_C= 10µA, I_E= 0

_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

h_FE1

h_FE2

V_CE= 2V, I_C= 0.5A^*2

V_CE= 2V, I_C= 1A^*2

200

800

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 0.5A, I_B= 20mA

I_C= 0.5A, I_B= 50mA

V_CB= 10V, I_E= –50mA, f = 200MHz

V_CB= 10V, I_E= 0, f= 1MHz

0.13

0.4

1.2

Transition frequency

Collector output capacitance

ON resistanse

f_T

200

MHz

C_ob

R_on

1.0

Ω

^*2Pulse measurement

Measurement circuit

1kΩ

Rank classification

I_B=1mA

FE1

f=1kHz

V=0.3V

Rank

h_FE1

V_B

V_A

V_V

200 ~ 350

300 ~ 500

400 ~ 800

V_B

R_on=

✕1000(Ω)

V_A–V_B

12 3

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