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2SD2000P PDF预览

2SD2000P

更新时间: 2024-02-18 09:51:48
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 69K
描述
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-127VAR

2SD2000P 技术参数

生命周期:Lifetime Buy包装说明:,
Reach Compliance Code:unknown风险等级:5.61
最大集电极电流 (IC):4 A配置:Single
最小直流电流增益 (hFE):40最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):2 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

2SD2000P 数据手册

 浏览型号2SD2000P的Datasheet PDF文件第2页浏览型号2SD2000P的Datasheet PDF文件第3页浏览型号2SD2000P的Datasheet PDF文件第4页 
Power Transistors  
2SD2000  
Silicon NPN triple diffusion planar type  
Unit: mm  
For power switching  
10.0 0.ꢀ  
5.5 0.ꢀ  
4.ꢀ 0.ꢀ  
ꢀ.7 0.ꢀ  
I Features  
φ ꢁ.1 0.1  
High-speed switching  
Satisfactory linearity of forward current transfer ratio hFE  
Large collector power dissipation PC  
Full-pack package which can be installed to the heat sink with one  
screw  
1.ꢁ 0.ꢀ  
1.4 0.1  
+0.ꢀ  
–0.1  
0.5  
0.8 0.1  
I Absolute Maximum Ratings TC = 25°C  
ꢀ.54 0.ꢁ  
5.08 0.5  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Rating  
Unit  
V
1: Base  
2: Collector  
3: Emitter  
80  
1
ꢀ ꢁ  
60  
V
EIAJ: SC-67  
TO-220F Package  
6
V
8
A
IC  
4
A
Base current  
IB  
1
A
TC = 25°C  
Ta = 25°C  
PC  
35  
W
Collector power  
dissipation  
2
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
I Electrical Characteristics TC = 25°C  
Parameter  
Collector cutoff current  
Emitter to base current  
Symbol  
ICBO  
Conditions  
Min  
Typ  
Max  
100  
Unit  
µA  
µA  
V
VCB = 80 V, IE = 0  
IEBO  
VEB = 6 V, IC = 0  
100  
Collector to emitter voltage  
Forward current transfer ratio  
VCEO  
IC = 25 mA, IB = 0  
60  
70  
20  
*
hFE1  
VCE = 4 V, IC = 1 A  
VCE = 4 V, IC = 4 A  
VCE = 4 V, IC = 4 A  
IC = 4 A, IB = 0.4 A  
250  
hFE2  
VBE(sat)  
VCE(sat)  
fT  
Base to emitter saturation voltage  
Collector to emitter saturation voltage  
Transition frequency  
Turn-on time  
2.0  
1.5  
V
V
VCE = 12 V, IC = 0.2 A, f = 10 MHz  
IC = 4 A, IB1 = 0.4 A, IB2 = 0.4 A,  
VCC = 50 V  
80  
0.3  
1.0  
0.2  
MHz  
µs  
ton  
Storage time  
tstg  
µs  
Fall time  
tf  
µs  
Note) : Rank classification  
*
Rank  
Q
P
hFE1  
70 to 150  
120 to 250  
1

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