Datasheet > 2SD2000Q

2SD2000Q

更新时间： 2024-11-19 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	69K
描述
TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 4A I(C) \| TO-127VAR

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中文翻译

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数据手册

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2SD2000Q 数据手册

Power Transistors

2SD2000

Silicon NPN triple diffusion planar type

Unit: mm

For power switching

10.0 0.ꢀ

5.5 0.ꢀ

4.ꢀ 0.ꢀ

ꢀ.7 ^0.ꢀ

I Features

φ ꢁ.1 0.1

•

High-speed switching

Satisfactory linearity of forward current transfer ratio h_FE

Large collector power dissipation P_C

Full-pack package which can be installed to the heat sink with one

screw

1.ꢁ 0.ꢀ

1.4 0.1

+0.ꢀ

–0.1

0.5

0.8 0.1

I Absolute Maximum Ratings T_C= 25°C

ꢀ.54 0.ꢁ

5.08 0.5

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

1: Base

2: Collector

3: Emitter

ꢀ ꢁ

EIAJ: SC-67

TO-220F Package

I_C

Base current

I_B

T_C= 25°C

T_a= 25°C

P_C

Collector power

dissipation

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Collector cutoff current

Emitter to base current

Symbol

I_CBO

Conditions

Min

Typ

Max

100

Unit

µA

V_CB= 80 V, I_E= 0

I_EBO

V_EB= 6 V, I_C= 0

100

Collector to emitter voltage

Forward current transfer ratio

V_CEO

I_C= 25 mA, I_B= 0

h_FE1

V_CE= 4 V, I_C= 1 A

V_CE= 4 V, I_C= 4 A

I_C= 4 A, I_B= 0.4 A

250

h_FE2

V_BE(sat)

V_CE(sat)

f_T

Base to emitter saturation voltage

Collector to emitter saturation voltage

Transition frequency

Turn-on time

2.0

1.5

V_CE= 12 V, I_C= 0.2 A, f = 10 MHz

I_C= 4 A, I_B1= 0.4 A, I_B2= − 0.4 A,

V_CC= 50 V

0.3

1.0

0.2

MHz

µs

t_on

Storage time

t_stg

µs

Fall time

t_f

µs

Note) : Rank classification

Rank

h_FE1

70 to 150

120 to 250

12 3 4

中文翻译

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