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2SD2004T105 PDF预览

2SD2004T105

更新时间: 2024-11-20 14:46:23
品牌 Logo 应用领域
罗姆 - ROHM 放大器晶体管
页数 文件大小 规格书
4页 140K
描述
Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

2SD2004T105 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.77最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:160 V配置:SINGLE
最小直流电流增益 (hFE):56JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

2SD2004T105 数据手册

 浏览型号2SD2004T105的Datasheet PDF文件第2页浏览型号2SD2004T105的Datasheet PDF文件第3页浏览型号2SD2004T105的Datasheet PDF文件第4页 

与2SD2004T105相关器件

型号 品牌 获取价格 描述 数据表
2SD2004T105/N ROHM

获取价格

1.5A, 160V, NPN, Si, POWER TRANSISTOR
2SD2004T105/NP ROHM

获取价格

Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy
2SD2004T105/NQ ROHM

获取价格

Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy
2SD2004T105/P ROHM

获取价格

1.5A, 160V, NPN, Si, POWER TRANSISTOR
2SD2004T105/PQ ROHM

获取价格

Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy
2SD2004T105/Q ROHM

获取价格

1.5A, 160V, NPN, Si, POWER TRANSISTOR
2SD2004T105N ROHM

获取价格

Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy
2SD2004T105P ROHM

获取价格

Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy
2SD2004T105Q ROHM

获取价格

Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy
2SD2005 ROHM

获取价格

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE