Datasheet > 2SD1997

2SD1997

更新时间： 2024-11-17 06:24:03

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	51K
描述
NPN Epitaxial Planar Silicon Transistor

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中文翻译

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数据手册

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2SD1997 数据手册

SMD Type

Transistors

NPN Epitaxial Planar Silicon Transistor

2SD1997

Features

Contains diode between collector and emitter.

Low saturation voltage.

Large current capacity.

Small-sized package making it easy to provide highdensity,

small-sized hybrid ICs.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current (pulse)

Collector dissipation

Jumction temperature

Storage temperature

I^CP

1.5

P^C

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Ic^BO

Testconditons

Min

Typ

Max

1.0

Unit

ìA

Collector cutoff current

VCB = 30V , IE = 0

V^CE= 2V , IC = 0.5A

V^CE= 2V , IC =2A

DC current Gain

h^FE

Gain bandwidth product

f^T

VCE = 2V , IC = 0.5A

VCB = 10V , f = 1MHz

100

MHz

Output capacitance

C^ob

Collector-emitter saturation voltage

Base-emitter on state voltage

Collector-to-base breakdown voltage

V^CE(sat)IC = 1A , IB = 50mA

V^BE(ON)ICE = 2V , IC = 1A

V^(BR)CBOIC = 10ìA , IE = 0

I^C= 10ìA , RBE =

0.12

0.3

Collector-to-emitter breakdown voltage

I^C= 10mA , RBE =

IF = 0.5A

V^(BR)CEO

V^F

Diode forward voltage

Base-emitter resistance

Base resistance

1.5

kÙ

R^BE

0.8

120

160

200

Marking

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