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2SD1998 PDF预览

2SD1998

更新时间: 2024-11-18 06:24:03
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
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描述
NPN Epitaxial Planar Silicon Transistor

2SD1998 数据手册

  
SMD Type  
Transistors  
NPN Epitaxial Planar Silicon Transistor  
2SD1998  
Features  
Low saturation voltage.  
Contains diode between collector and emitter.  
Contains bias resistance between collector and emitter.  
Large current capacity.  
Small-sized package making it easy to provide highdensity,  
small-sized hybrid ICs.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
40  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
30  
V
6
V
3
A
Collector current (pulse)  
Collector dissipation  
Jumction temperature  
Storage temperature  
ICP  
5
1.5  
A
PC  
W
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
Typ  
Max  
1.0  
Unit  
ìA  
Collector cutoff current  
IcBO  
VCB = 30V , IE = 0  
VCE = 2V , IC = 0.5A  
VCE = 2V , IC = 2A  
VCE = 2V , IC = 0.5A  
VCB = 10V , f = 1MHz  
70  
50  
DC current Gain  
hFE  
Gain bandwidth product  
fT  
100  
40  
MHz  
pF  
V
Output capacitance  
Cob  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector-to-base breakdown voltage  
VCE(sat) IC = 2A , IB = 100mA  
VBE(sat) IC = 2V , IB = 100mA  
V(BR)CBO IC = 10ìA , IE = 0  
0.2  
0.5  
1.5  
V
40  
40  
30  
V
V
IC = 10ìA , RBE =  
V(BR)CEO  
IC = 10mA , RBE =  
Collector-to-emitter breakdown voltage  
Diode forward voltage  
Base-emitter resistance  
VF  
IF = 0.5A  
1.5  
V
RBE  
0.8  
kÙ  
Marking  
Marking  
DM  
1
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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-127VAR