Datasheet > 2SD1998

2SD1998

更新时间： 2024-10-14 06:24:03

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	52K
描述
NPN Epitaxial Planar Silicon Transistor

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中文翻译

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数据手册

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2SD1998 数据手册

SMD Type

Transistors

NPN Epitaxial Planar Silicon Transistor

2SD1998

Features

Low saturation voltage.

Contains diode between collector and emitter.

Contains bias resistance between collector and emitter.

Large current capacity.

Small-sized package making it easy to provide highdensity,

small-sized hybrid ICs.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current (pulse)

Collector dissipation

Jumction temperature

Storage temperature

I^CP

1.5

P^C

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

1.0

Unit

ìA

Collector cutoff current

Ic^BO

VCB = 30V , IE = 0

V^CE= 2V , IC = 0.5A

V^CE= 2V , IC = 2A

VCE = 2V , IC = 0.5A

VCB = 10V , f = 1MHz

DC current Gain

hFE

Gain bandwidth product

f^T

100

MHz

Output capacitance

C^ob

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-to-base breakdown voltage

V^CE(sat)IC = 2A , IB = 100mA

V^BE(sat)IC = 2V , IB = 100mA

V^(BR)CBOIC = 10ìA , IE = 0

0.2

0.5

1.5

I^C= 10ìA , RBE =

V^(BR)CEO

I^C= 10mA , RBE =

Collector-to-emitter breakdown voltage

Diode forward voltage

Base-emitter resistance

V^F

IF = 0.5A

1.5

R^BE

0.8

kÙ

Marking

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