Datasheet > 2SD1996S

2SD1996S

更新时间： 2024-11-23 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	56K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 500MA I(C) \| SIP

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中文翻译

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数据手册

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2SD1996S 数据手册

Transistor

2SD1996

Silicon NPN epitaxial planer type

Unit: mm

For low-voltage output amplification

For muting

6.9±0.1

4.0

2.5±0.1

1.05

±0.05

(1.45)

0.8

0.7

For DC-DC converter

Features

■

0.65 max.

●

Low collector to emitter saturation voltage V_CE(sat)

●

Low ON resistance R_on.

High foward current transfer ratio h_FE

Allowing supply with the radial taping.

0.45⁺–0⁰.^.0¹5

2.5±0.5 2.5±0.5

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Note: In addition to the

lead type shown in

1:Emitter

2:Collector

the upper figure, the 3:Base

type as shown in

the lower figure is

also available.

MT1 Type Package

0.5

I_C

Collector power dissipation

Junction temperature

Storage temperature

P_C

600

˚C

1.2±0.1

T_j

150

0.65

max.

T_stg

–55 ~ +150

0.1

0.45_–0.05

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CB= 25V, I_E= 0

100

V_CBO

V_CEO

V_EBO

I_C= 10µA, I_E= 0

_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

h_FE1

h_FE2

V_CE= 2V, I_C= 0.5A^*2

V_CE= 2V, I_C= 1A^*2

200

800

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 0.5A, I_B= 20mA

I_C= 0.5A, I_B= 50mA

V_CB= 10V, I_E= –50mA, f = 200MHz

V_CB= 10V, I_E= 0, f= 1MHz

0.13

0.4

1.2

Transition frequency

Collector output capacitance

ON resistanse

f_T

200

MHz

C_ob

R_on

1.0

Ω

^*2Pulse measurement

Measurement circuit

1kΩ

Rank classification

I_B=1mA

FE1

f=1kHz

V=0.3V

Rank

h_FE1

V_B

V_A

V_V

200 ~ 350

300 ~ 500

400 ~ 800

V_B

R_on=

✕1000(Ω)

V_A–V_B

12 3

中文翻译

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与2SD1996S相关器件

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2SD1996T	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 500MA I(C) \| SIP
2SD1997	SANYO	获取价格	Compact Motor Driver Applications
2SD1997	KEXIN	获取价格	NPN Epitaxial Planar Silicon Transistor
2SD1997	TYSEMI	获取价格	Contains diode between collector and emitter. Low saturation voltage.
2SD1998	KEXIN	获取价格	NPN Epitaxial Planar Silicon Transistor
2SD1998	SANYO	获取价格	Compact Motor Driver Applications
2SD1998	TYSEMI	获取价格	Low saturation voltage. Contains diode between collector and emitter.
2SD1999	SANYO	获取价格	Compact Motor Driver Applications
2SD1999	KEXIN	获取价格	NPN Epitaxial Planar Silicon Transistor
2SD1999	TYSEMI	获取价格	Low saturation voltage. Contains diode between collector and emitter.