Datasheet > 2SD1994AR

2SD1994AR

更新时间： 2024-11-26 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	82K
描述
TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1A I(C) \| SIP

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中文翻译

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2SD1994AR 数据手册

Transistors

2SD1994A

Silicon NPN epitaxial planer type

Unit: mm

2.5 0.1

1.05

0.05

For low-frequency power amplification and driver amplification

Complementary to 2SB1322A

6.9 0.1

4.0

(1.45)

0.8

0.7

I Features

0.65 max.

• Low collector to emitter saturation voltage V_CE(sat)

• Output of 2 W to 3 W is obtained with a complementary pair with

2SB1322A

0.45⁺−⁰0.^.0¹5

• Allowing supply with the radial taping

2.5 0.5 2.5 0.5

I Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

Note) In addition to the

lead type shown in

the upper figure,

the type as shown

in the lower figure

is also available.

1: Emitter

2: Collector

3: Base

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

MT2 Type Package

1.5

I_C

Collector power dissipation ^*

Junction temperature

Storage temperature

P_C

°C

1.2 0.1

T_j

150

0.65

max.

T_stg

−55 to +150

0.1

0.45_−0.05

Note) : Printed circuit board: Copper foil area of 1 cm²or more, and the

(HW Type)

board thickness of 1.7 mm for the collector portion

I Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

I_CBO

Conditions

V_CB= 20 V, I_E= 0

Min

Typ

Max

Unit

µA

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

0.1

V_CBO

V_CEO

V_EBO

I_C= 10 µA, I_E= 0

I_C= 2 mA, I_B= 0

I_E= 10 µA, I_C= 0

Forward current transfer ratio ^*

h_FE1

h_FE2

V_CE= 10 V, I_C= 500 mA

V_CE= 5 V, I_C= 1 A

340

100

0.2

Collector to emitter saturation voltage ^*

V_CE(sat)

V_BE(sat)

f_T

I_C= 500 mA, I_B= 50 mA

V_CB= 10 V, I_E= −50 mA, f = 200 MHz

V_CB= 10 V, I_E= 0, f = 1 MHz

0.4

1.2

Base to emitter saturation voltage ^*

0.85

200

Transition frequency ^*

MHz

Collector output capacitance

C_ob

Note) 1: Pulse measurement

2: Rank classification

Rank

No-rank

h_FE1

85 to 170

120 to 240

170 to 340

85 to 340

Product of no-rank is not classified and have no indication for rank.

12 3 4

中文翻译

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与2SD1994AR相关器件

型号	品牌	获取价格	描述	数据表
2SD1994AS	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1A I(C) \| SIP
2SD1994A-SZ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1995	PANASONIC	获取价格	Silicon NPN epitaxial planer type(For low-frequency amplification)
2SD1995-HW	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
2SD1995R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 50MA I(C) \| SIP
2SD1995S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 50MA I(C) \| SIP
2SD1995-SZ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
2SD1995T	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 50MA I(C) \| SIP
2SD1996	PANASONIC	获取价格	Silicon NPN epitaxial planer type(For low-voltage output amplification)
2SD1996-HW	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon

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