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2SD1978 PDF预览

2SD1978

更新时间: 2024-11-20 06:17:27
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号双极晶体管放大器
页数 文件大小 规格书
6页 160K
描述
Silicon NPN Epitaxial, Darlington

2SD1978 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:TO-92MOD, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.5
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:120 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):2000
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):0.9 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SD1978 数据手册

 浏览型号2SD1978的Datasheet PDF文件第2页浏览型号2SD1978的Datasheet PDF文件第3页浏览型号2SD1978的Datasheet PDF文件第4页浏览型号2SD1978的Datasheet PDF文件第5页浏览型号2SD1978的Datasheet PDF文件第6页 
2SD1978  
Silicon NPN Epitaxial, Darlington  
REJ03G0799-0200  
(Previous ADE-208-1162)  
Rev.2.00  
Aug.10.2005  
Application  
Low frequency power amplifier  
Complementary pair with 2SB1387  
Outline  
RENESAS Package e: PRSS0003DC-A  
(Package name: Td)  
2
1. Emitter  
2. Collector  
3. Base  
3
ID  
2 k  
(Typ)  
0.5 kΩ  
(Typ)  
1
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbo
VCBO  
VCEO  
VEBO  
IC  
Unit  
V
V
V
A
Collector peak current  
Collector power dissipation  
Junction temperature  
ic (peak)  
PC  
0  
A
0.9  
W
°C  
°C  
A
Tj  
150  
Storage temperature  
Tstg  
ID  
–55 to +150  
1.5  
E to C diode forward current  
Rev.2.00 Aug 10, 2005 page 1 of 5  

2SD1978 替代型号

型号 品牌 替代类型 描述 数据表
2SD1978 HITACHI

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