Datasheet > 2SD1979

2SD1979

更新时间： 2024-11-20 06:23:39

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描述
Silicon NPN Epitaxial Planar Type

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中文翻译

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数据手册

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2SD1979 数据手册

SMD Type

TransistIoCrs

Silicon NPN Epitaxial Planar Type

2SD1979

Features

Low on resistance ron.

High forward current transfer ratio hFE.

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector current

300

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

500

P^C

150

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CEO

V^BE

Testconditons

IC = 1 mA, IB = 0

Min

Typ

0.6

Max

Unit

Collector-emitter voltage

Base-emitter voltage

VCE = 2 V, IC = 4 mA

VCB = 50 V, IE = 0

VEB = 25 V, IC = 0

VCE = 2 V, IC = 4 mA

Collector-base cutoff current

Collector-emitter cutoff current

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

I^CBO

I^CEO

h^FE

ìA

500

2500

0.1

V^CE(sat)IC = 30 mA, IB = 3 mA

f^T

VCB = 6 V, IE = -4 mA, f = 200 MHz

V^CB= 10 V, IE = 0, f = 1 MHz

MHz

Collector output capacitance

Cob

4.5

ON resistance

R^on

hFE Classification

Marking

Rank

h^FE

500 1500

800 2500

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