Datasheet > 2SD1980_09

2SD1980_09

更新时间： 2022-09-18 10:47:33

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	159K
描述
Power Transistor (100V, 2A)

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数据手册

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2SD1980_09 数据手册

Power Transistor (100V, 2A)

2SD1980 / 2SD1867

zFeatures

zDimensions (Unit : mm)

1) Darlington connection for high DC current gain.

2) Built-in resistor between base and emitter.

3) Built-in damper diode.

2SD1980

6.5

5.1

2.3

0.5

4) Complements the 2SB1316.

zinner circuit

0.75

0.65

2.3

0.9

(1)

2.3

(3)

(2)

0.5

1.0

(1) Base

(2) Collector

(3) Emitter

3.5kΩ

300Ω

: Base

: Collector

: Emitter

ROHM : CPT3

EIAJ : SC-63

2SD1867

2.5

zAbsolute maximum ratings (Ta=25°C)

6.8

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

VCBO

VCEO

VEBO

Limits

100

Unit

A(DC)

A(Pulse)

Collector current

∗1

∗2

0.65Max.

Collector

2SD1980

power

W(Tc=25°C)

dissipation

2SD1867

°C

0.5

Junction temperature

Storage temperature

150

( )

Tstg

−55 to +150

∗

Single pulse Pw

Printed circuit board, 1.7mm thick, collector plating 100mm²or larger.

=100ms

∗2

2.54

1.05

0.45

Taping specifications

zPackaging specifications and h^FE

(1) Emitter

(2) Collector

(3) Base

Type

2SD1980

CPT3

1k to 10k

−

2SD1867

ROHM : ATV

Package

ATV

1k to 10k

−

hFE

Marking

Code

TV2

Basic ordering unit (pieces)

2500

∗

Denotes hFE

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

BVCBO

BVEBO

Min.

100

Typ.

−

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

=50µA

=5mA

CBO

−

µA

CB =100V

EB =5V

Emitter cutoff current

EBO

Collector-emitter saturation voltag

Base-Emitter saturation voltage

DC current transfer ratio

Transition frequency

CE(sat)

1.5

2.0

10000

−

=1A,I

=1mA

/I =1A/1mA

∗

VBE(sat)

hFE

1000

−

MHz

CE =2V,I

CE =5V,I

=1A

−

=−0.1A,f=30MHz

=0A,f=1MHz

Output capacitance

Measured using pulse current.

Cob

−

CB =10V,I

∗

www.rohm.com

2009.12 - Rev.C

1/2

12 3

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