Datasheet > 2SD1980_12

2SD1980_12

更新时间： 2024-11-24 07:31:39

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	128K
描述
Power Transistor

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中文翻译

获取价格

数据手册

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2SD1980_12 数据手册

Power Transistor (100V, 2A)

2SD1980

Features

Dimensions (Unit : mm)

1) Darlington connection for high DC current gain.

2) Built-in resistor between base and emitter.

3) Built-in damper diode.

2SD1980

6.5

5.1

2.3

0.5

4) Complements the 2SB1316.

inner circuit

0.75

0.65

2.3

0.9

(1)

2.3

(3)

(2)

0.5

1.0

(1) Base

(2) Collector

(3) Emitter

3.5kΩ

300Ω

: Base

: Collector

: Emitter

ROHM : CPT3

EIAJ : SC-63

Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

VCBO

VCEO

VEBO

Limits

100

Unit

A(DC)

A(Pulse)

Collector current

∗1

Collector power dissipation

W(Tc=25°C)

Junction temperature

Storage temperature

150

°C

Tstg

−55 to +150

∗

1 Single pulse Pw=100ms

Packaging specifications and hFE

Type

2SD1980

CPT3

1k to 10k

−

Package

hFE

Marking

Code

Basic ordering unit (pieces)

2500

∗

Denotes hFE

Electrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

BVCBO

BVEBO

Min.

100

Typ.

−

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

=50μA

=5mA

CBO

−

μA

CB =100V

EB =5V

Emitter cutoff current

EBO

Collector-emitter saturation voltag

Base-Emitter saturation voltage

DC current transfer ratio

Transition frequency

CE(sat)

1.5

2.0

10000

−

=1A,I

=1mA

/I =1A/1mA

∗

BE(sat)

hFE

1000

−

MHz

CE =2V,I

CE =5V,I

=1A

=−0.1A,f=30MHz

=0A,f=1MHz

Output capacitance

Cob

−

CB =10V,I

∗

Measured using pulse current.

www.rohm.com

2012.01 - Rev.D

1/2

12 3

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