Datasheet > 2SD1979S

2SD1979S

更新时间： 2024-11-19 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关光电二极管
页数	文件大小	规格书
3页	50K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 300MA I(C) \| TO-236VAR

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中文翻译

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数据手册

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2SD1979S 数据手册

Transistor

2SD1979

Silicon NPN epitaxial planer type

For low-voltage output amplification

For muting

Unit: mm

For DC-DC converter

2.1±0.1

0.425

1.25±0.1

0.425

Features

Low ON resistance R_on.

■

●

High foward current transfer ratio h_FE

●

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

0.2±0.1

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1:Base

2:Emitter

3:Collector

EIAJ:SC–70

S–Mini Type Package

500

˚C

I_C

300

Marking symbol : 3W

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Emitter cutoff current

_CB= 50V, I_E= 0

I_EBO

V_EB= 25V, I_C= 0

Collector to emitter voltage

Forward current transfer ratio

V_CEO

I_C= 1mA, I_B= 0

h_FE

V_CE= 2V, I_C= 4mA

500

2500

0.1

Collector to emitter saturation voltage V_CE(sat)

I_C= 30mA, I_B= 3mA

V_CE= 2V, I_C= 4mA

Base to emitter voltage

Transition frequency

Collector output capacitance

ON resistanse

V_BE

f_T

0.6

V_CB= 6V, I_E= –4mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

MHz

C_ob

4.5

1.0

R_on

Ω

Rank classification

Measurement circuit

1kΩ

Rank

h_FE

I_B=1mA

500 ~ 1500 800 ~ 2500

3WS 3WT

f=1kHz

V=0.3V

V_B

V_A

Marking Symbol

V_V

V_B

R_on=

✕1000(Ω)

V_A–V_B

12 3

中文翻译

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