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2SD1978TZ PDF预览

2SD1978TZ

更新时间: 2024-11-24 06:17:27
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管放大器
页数 文件大小 规格书
6页 160K
描述
Silicon NPN Epitaxial, Darlington

2SD1978TZ 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:SC-51, TO-92MOD, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.5
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:120 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):2000
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:2端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SD1978TZ 数据手册

 浏览型号2SD1978TZ的Datasheet PDF文件第2页浏览型号2SD1978TZ的Datasheet PDF文件第3页浏览型号2SD1978TZ的Datasheet PDF文件第4页浏览型号2SD1978TZ的Datasheet PDF文件第5页浏览型号2SD1978TZ的Datasheet PDF文件第6页 
2SD1978  
Silicon NPN Epitaxial, Darlington  
REJ03G0799-0200  
(Previous ADE-208-1162)  
Rev.2.00  
Aug.10.2005  
Application  
Low frequency power amplifier  
Complementary pair with 2SB1387  
Outline  
RENESAS Package e: PRSS0003DC-A  
(Package name: Td)  
2
1. Emitter  
2. Collector  
3. Base  
3
ID  
2 k  
(Typ)  
0.5 kΩ  
(Typ)  
1
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbo
VCBO  
VCEO  
VEBO  
IC  
Unit  
V
V
V
A
Collector peak current  
Collector power dissipation  
Junction temperature  
ic (peak)  
PC  
0  
A
0.9  
W
°C  
°C  
A
Tj  
150  
Storage temperature  
Tstg  
ID  
–55 to +150  
1.5  
E to C diode forward current  
Rev.2.00 Aug 10, 2005 page 1 of 5  

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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-236VAR